| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 79163 | Solar Energy Materials and Solar Cells | 2011 | 4 Pages |
Abstract
Using Al added Mo back electrode to provide Al source to form CuInAlSe2 (CIAS) absorber with self-formed double graded bandgap (or Al concentration) is reported. The double Al grading is self-forming and requires no process tweaking or modification. A 15 at % Al in Mo(Al) film yielded 0.39 Al/(In+Al) ratio in the CIAS film with a bandgap of 1.54 eV at the surface. The benefits of doping Al into Mo film are: lower resistance of the Mo layer, improved Mo to glass adhesion, increased surface electric field or improved minority carrier collection from the graded Al content (graded bandgap), and supply Al to form a CIAS absorber layer.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Dung-Ching Perng, Jhin-Wei Chen, Chyi-Jeng Wu,