Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7921098 | Journal of Physics and Chemistry of Solids | 2015 | 15 Pages |
Abstract
We study the linear optical absorption of bulk semiconductors in the presence of a uniform and constant (dc) electric field with an approach suitable for including excitonic effects while working with many-band models. The absorption coefficient is calculated from the time evolution of the interband polarization excited by an optical pulse. We apply the formalism to a numerical calculation for GaAs using a 14-band k·p model, which allows us to properly include interband coupling, and the exchange self-energy to account for the excitonic effects due to the electron-hole interaction. The Coulomb interaction enhances the features of the absorption coefficient captured by the k·p model; the enhancement depends on the strength of the dc field and the polarization of the optical field. With respect to the polarization dependence, we find that the anisotropy described by the independent particle approximation can be modified significantly by the Coulomb interaction.
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Authors
Federico Duque-Gomez, J.E. Sipe,