| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7922685 | Materials Chemistry and Physics | 2015 | 4 Pages |
Abstract
A unique parallel-to-vertical alternating layer microstructure is observed in the In/Ag2Se couples reacted at 723 K (450 °C). The reaction zone has two different regions. Both regions are composed of liquid and In4Se3 phases. The region adjacent to the Ag2Se substrate has alternating-layer structure, and the layers are aligned parallel to the reaction zone/Ag2Se interface. The phase growth direction changes abruptly in the other region and is nearly vertical at the end adjacent to the parallel region.
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Authors
Sinn-wen Chen, Jui-shen Chang, Chia-ming Hsu, Jhe-Yu Lin, Chao-hong Wang,