Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7923009 | Materials Chemistry and Physics | 2015 | 6 Pages |
Abstract
ZnO: Ga thin films have been prepared by spin coating on glass substrate using solutions of zinc acetate dihydrate and gallium nitrate hydrate precursors in methanol, ethanol and 2-methoxyethanol with mono-ethanolamine as complexing agent to examine the effect of solvent on their opto-electrical characteristics. The selection of the solvent involves factors like toxicity, sol stability and the film properties. Accordingly, ethanol is shown to be suitable for yielding a stable sol to produce low cost 1 at% GaâZnO thin films useful for photovoltaic applications. These films exhibit hexagonal structure with (0001) preferred orientation, optical transmittance of â¼75â96% in wavelength range 400â900 nm, electrical resistivity of â¼Â 3 Ã 10â2 Ω-cm and electron mobility of â¼24 cm2/ V. s.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Amit Kumar Srivastava, Jitendra Kumar,