| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7923482 | Materials Chemistry and Physics | 2011 | 4 Pages |
Abstract
ⶠThe ATR'd material quality of HOT wafer depends on time of defect-removal anneal. ⶠATR-induced defects are repaired further by longer defect-removal anneal. ⶠBetter Si/SiO2 interface of nMOSFETs achieves using modified annealing treatment. ⶠThe modified annealing treatment would not affect characteristics of pMOSFETs.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Po Chin Huang, San Lein Wu, Shoou Jinn Chang, Yao Tsung Huang, Chien Ting Lin, Mike Ma, Osbert Cheng,