Nanostructured p-CuIn3Se5/n-CdS heterojunction engineered using simple wet chemical approach at room temperature for photovoltaic application

► The Nanostructured p-CuIn3Se5/n-CdS heterojunction engineered using simple wet chemical approach at room temperature on glass substrates. ► The interface, composition and surface can be well modified using the chemical ion exchange method to synthesize the heterojunction and post deposition treatment such as annealing at 200 °C. ► The optical properties such as energy band gap observed at ∼1.4 eV which matches with the natural sun spectrum of AM 1.5 and the electrical properties including I-V analysis exhibits its use as an efficient material for solar cell applications.