Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(0Â 0Â 1) for high-power MOSFET applications

Figure shows the normalized capacitance (C/COX) versus voltage (V) for the MOS capacitors on 3 μm, 7 μm thick 3C-SiC films and silicon (as reference), respectively. The shift of the curve respect to the reference is due to the presence of fixed and/or trapped charge in the oxide and interface trapped charge, due to the presence of interface states of density Dit, located at the semiconductor/oxide interface.