Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7924227 | Materials Science and Engineering: B | 2015 | 8 Pages |
Abstract
A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6Â A and a blocking capability of 600Â V. Analysis of 200Â V/1Â A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96Â V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Po-Chien Chou, Stone Cheng,