Electrical properties of Pb(Zr0.52Ti0.48)O3-BiFeO3 multilayers on non-platinized silicon substrate

In this study, a Pb(Zr0.52Ti0.48)O3/BiFeO3 (PZT-BFO) multilayer film is deposited by the sol-gel technique on a silicon substrate. Prior to the multilayer deposition, a ZrO2 buffer layer is introduced. The multilayer thin film shows the polycrystalline phase-pure perovskite structures of BFO and PZT. Surface morphology study indicates that the grain size of the film varies from 20 to 30 nm. In the absence of the bottom electrode, the electrical properties of the film are studied in-plane by fabricating interdigitated terminals (IDTs) on top of the film. The inter-IDT line gap is kept large (10 μm) to avoid shorting due to unintentional particle contamination. The remnant polarization of the film is found to be ∼35 μC/cm2 at a 100-V bias. The dielectric constant of the film is found to be 650 at 1 kHz. The film also showed a low leakage current density of ∼4 × 10−9 A/cm2 at 200 kV/cm.