| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7924265 | Materials Science and Engineering: B | 2015 | 6 Pages |
Abstract
- Catalyst-free growth of InAs quantum dots was carried out on high-k ZrO2.
- Memory device with InAs quantum dots as charge storage nodes are fabricated.
- Superior memory window, low leakage and reasonably good retention were observed.
- Carrier transport phenomena are explained in both program and erase operations.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Sk Masiul Islam, Pranab Biswas, P. Banerji, S. Chakraborty,