Article ID Journal Published Year Pages File Type
7924457 Modern Electronic Materials 2016 5 Pages PDF
Abstract
The effect of thermal annealing of GaN:Mg layers on acceptor impurity activation has been investigated. Hole concentration increased and mobility decreased with an increase in thermal annealing temperature. The sample annealed at 1000 °C demonstrated the lowest value of resistivity. Rapid thermal annealing (annealing with high heating speed) considerably improved the efficiency of Mg activation in the GaN layers. The optimum time of annealing at 1000 °C has been determined. The hole concentration increased by up to 4 times compared to specimens after conventional annealing.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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