Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7924468 | Modern Electronic Materials | 2016 | 4 Pages |
Abstract
We have studied the transformation of radiation-induced defects forming as a result of proton implantation into n silicon crystals with a resistivity of 100 Ω cm using high resolution X-ray diffraction and shown that sequential implantation of 100, 200 and 300 keV protons with a fluence of 2.1016 cmâ2 causes the formation of a 2.4 μm thick damaged layer with a greater lattice parameter. The layer forms simultaneously with intrinsic clusters of vacancy and interstitial type radiation-induced defects. Vacuum annealing of the irradiated crystals at 600 °C increases the power of the radiation-induced defects of both types and reduces their quantity. Interstitial type defects dominate after annealing at 1100 °C. We have assessed the power of the defects at every transformation stage.
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Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Igor S. Smirnov, Irina G. Dyachkova, Elena G. Novoselova,