Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7924876 | Optics Communications | 2018 | 5 Pages |
Abstract
Here we present a feasible way to fabricate a high-performance graphene phototransistor functionalized with Poly(3-hexylthiophene) (P3HT)/graphene bulk heterojunction by solution processing, which possesses the advantages of the high carrier mobility of graphene and the high visible light absorption of P3HT. The hole field-effect mobility for the device was 3.8 cm2Vâ1sâ1 at room temperature. The photoresponsivity, external quantum efficiency and detectivity were 12 A/W, 3 Ã 103 % and 1.6 Ã 106 Jones at a illumination irradiance of 15 mW/cm2 respectively. The phototransistor exhibited sensitive photoresponse with a rise time of 168 ms and a decay time of 121 ms.
Related Topics
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Authors
Yongli Che, Guizhong Zhang, Yating Zhang, Xiaolong Cao, Mingxuan Cao, Yu Yu, Haitao Dai, Jianquan Yao,