High near-infrared transmittance and waveguide structures in polycrystalline ZnSe by carbon and proton implantation combined with photolithography

We report on near-infrared (NIR) waveguide structures in polycrystalline ZnSe using the carbon ion implantation technique combined with standard lithography. High NIR transmittance is observed by the absorption spectra before and after carbon and proton implantation at room temperature. Two half-Gaussian curves are used to reconstruct the refractive index profile of the waveguides at a wavelength of 1539 nm. The results show that the numerically simulated mode by the finite difference beam propagation method (FD-BPM) is in good agreement with the experimental data by end-facet setup, which exhibits a high potential for designable NIR waveguide devices in polycrystalline ZnSe by carbon ion implantation.