Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7925391 | Optics Communications | 2018 | 5 Pages |
Abstract
In order to study the continuous wave (CW) laser radiation effects and mechanism of GaInP/GaAs/Ge triple-junction solar cells (TJSCs), 1-on-1 mode irradiation experiments were carried out. It was found that the post-irradiation short circuit current (ISC) of the TJSCs initially decreased and then increased with increasing of irradiation laser power intensity. To explain this phenomenon, a theoretical model had been established and then verified by post-damage tests and equivalent circuit simulations. Conclusion was drawn that laser induced alterations in the surface reflection and shunt resistance were the main causes for the observed non-monotonic decrease in the ISC of the TJSCs.
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Authors
Peng-Cheng Dou, Guo-Bin Feng, Jian-Min Zhang, Ming-Ying Song, Zhen Zhang, Yun-Peng Li, Yu-Bin Shi,