| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7925881 | Optics Communications | 2018 | 4 Pages |
Abstract
AlGaInAs electroabsorption-modulated lasers (EMLs) fabricated by identical epitaxial layer technique are demonstrated. The EML device shows an infinite characteristic temperature when the temperature ranges from 20 oC to 30 oC. The integrated modulator has static extinction ratios of larger than 20 dB at a reverse bias voltage of â2 V. The small signal modulation bandwidth of the modulator is larger than 11Â GHz. At 10 Gb/s data modulation, the dynamic extinction ratio is about 9.5 dB in a back to back test configuration. Because only a simple fabrication procedure is needed, our EMLs are promising low cost light sources for optical fiber transmission applications.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Qiufang Deng, Lu Guo, Song Liang, Siwei Sun, Xiao Xie, Hongliang Zhu, Wei Wang,