| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7926067 | Optics Communications | 2018 | 5 Pages |
Abstract
An approach to integrate InAs/GaAs quantum dots (QDs) active layer on SiO2/Si chip for single photon emitter is demonstrated. The QDs are embedded in GaAs/SiO2 hybrid whispering gallery mode microdisks with the diameters of 10 and 5 μm, corresponding to the quality factors (Q) of 2287 ± 167 and 4366 ± 208, respectively. Temperature tuning QD-cavity resonance is observed. The cavity-enhanced exciton spontaneous emission and single photon emission characteristics are studied.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
P.Y. Yue, X.M. Dou, H.Y. Wang, B. Ma, Z.C. Niu, B.Q. Sun,