A 1.3-μm four-channel directly modulated laser array fabricated by SAG-Upper-SCH technology

A monolithically integrated four-channel directly modulated laser (DML) array working at the 1.3-μm band is demonstrated. The laser was manufactured by using the techniques of selective area growth (SAG) of the upper separate confinement heterostructure (Upper-SCH) and modified butt-joint method. The fabricated device showed stable single mode operation with the side mode suppression ratio (SMSR) >35 dB, and high wavelength accuracy with the deviations from the linear fitted values <±0.03 nm for all channels. Furthermore, small signal modulation bandwidth >7 GHz was obtained, which may be suitable for 40 GbE applications in the 1.3-μm band.