Simple fabricate ZnO individual microwall UV detector grown along the cracks of GaN/Si by the aqueous method

Ultraviolet (UV) photodetector(PD) based on ZnO microwall (MW) structure was fabricated in this paper. The MW structure was directed by the crack of GaN substrate, which was formed by self-assembly growth ZnO nanorods. Meanwhile, simple UV PD was fabricated by directly contacting with Ag paste. The UV PD based on MW shows ultra-fast photoresponses and reliable UV sensitivity. It can be attribute to the large surface-to-volume ratio of the ZnO MW and the hexagonal cross-section which can strongly confine the light inside and enhance the interaction between the light and the ZnO material. It suggests that ZnO MW is superior materials for UV detection.