Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7928087 | Optics Communications | 2016 | 4 Pages |
Abstract
The n-InN/p-NiO/GaN heterojunction was fabricated by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency magnetron sputtering. The device exhibited typical rectification characteristic with a turn-on voltage of ~1.5Â V. Under forward bias, a dominant near infrared emission (NIR) peaked around 1565Â nm was detected at room temperature. The NIR emission was attributed to the band-edge emission of InN film according to the photoluminescence spectrum of InN layer. Furthermore, the mechanism of the current transport and light emission was tentatively discussed in terms of the band diagrams of the heterojunction.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yang Zhao, Hui Wang, Shiwei Zhuang, Guoguang Wu, Jiyan Leng, Wancheng Li, Fubin Gao, Baolin Zhang, Guotong Du,