Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7929589 | Optics Communications | 2015 | 5 Pages |
Abstract
We report on the experimental demonstration of the efficiency improvement of flexible a-SiGe:H solar cells decorated by SiNx composite nanostructures. The structures, which are composed of SiNx nanodome structures and a thin SiNx film that is underneath the nanodome structures, were implemented via sequential processes using inductance-coupled plasma chemical vapor deposition (ICP-CVD), nanosphere lithography (NSL), and reactive ion etching (RIE). Compared with the a-SiGe:H solar cells without the SiNx composite nanostructures, solar cells with SiNx composite nanostructures exhibit that the surface reflectivity reduces down to less than 5% over the spectrum range of 200-700Â nm, and the open circuit voltage (Voc) and fill factor (FF) increase up to 0.76Â V from 0.70Â V and 52.4% from 38.4% respectively, although the short circuit current density (Jsc) reduces down to 11.6Â mA/cm2 from 14.7Â mA/cm2. The improvement for Voc and FF indicates that a-SiGe:H solar cells were well passivated by using such SiNx composite structures, which results in the overall enhancement of the conversion efficiency from 4.38% to 5.13% finally. If the absorption of the dielectric composite nanostructures decreases, the higher conversion efficiency should be promisingly achieved in these Si-based thin film solar cells decorated by dielectric composite nanostructures.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yanyan Wang, Xiaojun Ye, Jian Zhu, Zhen Zhang, Junkun Yang, Xuemei Wu, Bocang Qiu, Ruiying Zhang,