Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7932807 | Photonics and Nanostructures - Fundamentals and Applications | 2018 | 5 Pages |
Abstract
Although that the continuous tunability of InGaN/GaN QW LEDs, carries the promise of a significant impact in optoelectronics, the reduction of the square of the overlap of electron and hole wave functions (Meh2) in InGaN/GaN QW LEDs, under certain conditions, is a sizable problem, difficult to overcome. Theoretical investigations have been carried out on the incorporation of Indium (In) in the GaN barrier layers, with an aim of increasing the overlap of electron and hole wave functions. Rigorous studies through the self consistent solution of Schrödinger and Poison equations expose some new and striking results. With suitable doping, the inclusion of In in the barriers can increase Meh2 to more than two times that of a conventional InGaN/GaN QW LED. In in the barrier along with doping may be suitably utilized to tailor the transition energy and Meh2 with current density, as desired. The transition energy and the Meh2 may be made to have a positive or a negative slope with current density or they may be made fairly constant. This paper will outline the theoretical details, computational methodologies, the parameters used, and the striking new results with suitable depictions and discussions. These new information ought to be interesting for current optoelectronics.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Anup Gorai, Apu Mistry, Siddhartha Panda, Dipankar Biswas,