Influence of por-Si sublayer on the features of heteroepitaxial growth and physical properties of InxGa1-xN/Si(111) heterostructures with nanocolumn morphology of thin film

By means of a complex of structural and spectroscopy analysis methods, it was shown that the growth of InxGa1-xN nanocolumns on a nanoporous buffer substrate has numerous advantages compared to when c-Si is used. The por-Si substrate largely contributes to the orientation of the growth of the InxGa1-xN nanocolumns closer to that of Si(111), allowing the InxGa1-xN nanocolumns to be obtained with a higher crystallographic uniformity and a unified lateral size along the entire surface of ∼40 nm. In addition, the growth of the InxGa1-xN columns on por-Si results in a decrease in the deformation component εxx and εzz, as well as the density of edge and screw dislocations compared to similar coefficients for the InxGa1-xN nanocolumns grown on c-Si. Furthermore, the nanocolumn InxGa1-xN obtained using por-Si substrate has a higher carrier charge concentration (+20%) compared to that grown using c-Si, as well as a higher intensity of a quantum yield of photoluminescence (+25%).