Switching effects and spin-valley Andreev resonant peak shifting in silicene superconductor

The magnetoresistance and spin-valley transport properties in a silicene-based NM/FB/SC junction are investigated, where NM, FB and SC are normal, ferromagnetic and s-wave superconducting silicene, respectively. In the FB region, perpendicular electric and staggered exchange fields are applied. The quasiparticles may be described by Dirac Bogoliubov-de Gennes equation due to Cooper pairs formed by spin-valley massive fermions. The spin-valley conductances are calculated based on the modified Blonder-Tinkham-Klapwijk formalism. We find the spin-valley dependent Andreev resonant peaks in the junction shifted by applying exchange field. Perfect conductance switch generated by interplay of intrinsic spin orbit interaction and superconducting gap has been predicted. Spin and valley polarizations are almost linearly dependent on biased voltage near zero bias and then turn into perfect switch at biased voltage approaching the superconducting gap. The perfect switching of large magnetoresistance has been also predicted at biased energy near the superconducting gap. These switching effects may be due to the presence of spin-valley Andreev resonant peak near the superconducting gap. Our work reveals potential of silicene as applications of electronic switching devices and linear control of spin and valley polarizations.