| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 79340 | Solar Energy Materials and Solar Cells | 2010 | 5 Pages |
Double barrier resonant tunnelling structures consisting of silicon quantum dots (QDs) in silicon dioxide (SiO2SiO2) matrix have been studied for Energy Selective Contacts for Hot Carrier solar cell. A single layer of silicon QDs has been fabricated by high temperature annealing of SiO2SiO2/ Si-rich oxide (SRO)/SiO2SiO2 layers deposited by RF magnetron sputtering. Compositional analysis of SRO films obtained with different sputtering target has been accurately measured with Rutherford backscattering spectroscopy. Size-controlled growth of Si QDs has been studied with photoluminescence measurements which demonstrate that QD sizes can be controlled with SRO layer thickness. In addition, resonant tunnelling behaviour of SiO2SiO2/ Si QD/SiO2SiO2 structures has been investigated.
