Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7934017 | Physica E: Low-dimensional Systems and Nanostructures | 2015 | 13 Pages |
Abstract
The effects of the magnetic field and impurity position on the electronic states and nonlinear light absorption in a GaAs pyramidal quantum dot are investigated. The calculations were performed by using the total optical susceptibility for an incident light elliptically polarized along the pyramid growth axis. We proved that: (i) the optical susceptibility can be considerably modified by moving the impurity along the pyramid height; (ii) the enhancement of the magnetic field blueshifts the transition energies and increases the magnitude of the absorption coefficient; (iii) the light dispersion and absorption, as well as the group velocity can be controlled by changing the light intensity and its ellipticity parameter, without supplementary geometrical manipulations.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
E.C. Niculescu, D. Bejan,