Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7934520 | Physica E: Low-dimensional Systems and Nanostructures | 2014 | 5 Pages |
Abstract
A study of vertical transport in δ-doped SiGe/Si heterostructures is presented. An asymmetrical triple barrier structure was grown with a δ-layer of boron impurity in the center of a narrow quantum well. The growth procedure was followed by conventional processing including photolithography, plasma etching and magnetron sputtering. Secondary-ion mass-spectroscopy depth profiling and high resolution x-ray diffraction were used to control the as-grown structure. The conductance of the structure was measured at liquid helium temperature and analyzed. All pronounced resonances were identified. The resonant feature near 60 mV is attributed to impurity-assisted tunneling, which is supported by calculation of the binding energy of the acceptor in the narrower quantum well.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
R.Kh. Zhukavin, N.A. Bekin, D.N. Lobanov, Yu.N. Drozdov, P.A. Yunin, M.N. Drozdov, D.A. Pryakhin, E.D. Chhalo, D.V. Kozlov, A.V. Novikov, V.N. Shastin,