Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7934933 | Solar Energy | 2018 | 6 Pages |
Abstract
In this report, a numerical simulation for ITO/n-Si based hetero-junction (ISHJ) photovoltaic device has been carried out by using AFORS-HET software and a proper model, in which the naturally derived interface layer with a ternary-like hybrid of a-SiOx(In) is assumed to be a double stacks of 1.2â¯nm quasi p type semiconductor and 0.2â¯nm insulator as buffer layer. The negative charge centers, in the range of >1â¯Ãâ¯1017â¯cmâ3, associated with oxygen vacancies and indium-ion correlative ternary hybrid in the intermediate region play multi-roles, including field effect passivation, inducing inversion layer and acting selective contacts to a certain extent. The simulation results manifest that the intermediate region behaviors as a semiconductor material with a wide band gap of 2.06â¯eV, which is suitable for the transport of hole and an induced quasi p-n junction. Additionally, the simulated J-V curve arisen from the key opto-electric parameters of the device by the simulation agrees with the experimental one with a high fill factor of 74.2% well.
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Energy
Renewable Energy, Sustainability and the Environment
Authors
X.M. Song, M. Gao, Z.G. Huang, B.C. Han, Y.Z. Wan, Q.Y. Lei, Z.Q. Ma,