Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7935192 | Solar Energy | 2018 | 5 Pages |
Abstract
We have investigated the phosphosilicate glass (PSG) passivation effect on electrical characteristics of the structure fabricated by use of the surface structure chemical transfer (SSCT) method. Cross-sectional SEM measurements show that PSG can penetrate into nano-sized pores of the nc-Si layer. For thick nc-Si layer, e.g., â¼300â¯nm, however, un-filled nano-sized pores remain in the deep region of the layer. It is founded that complete PSG filling of the nano-sized pores in the nc-Si layer with its thickness less than â¼160â¯nm greatly improves the effective minority carrier lifetime. The valence band maximum is found to shift toward the lower energy by the SSCT treatment, indicating the band-gap widening of the nc-Si layer. When pores in the nc-Si layer is completely filled with PSG, the effective minority carrier lifetime increases with the thickness of the nc-Si layer, suggesting formation of the graded band-gap structure which can suppress recombination of photo-generated electron-hole pairs.
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Physical Sciences and Engineering
Energy
Renewable Energy, Sustainability and the Environment
Authors
Kentaro Imamura, Yuya Onitsuka, Shogo Kunieda, Hikaru Kobayashi,