| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 79363 | Solar Energy Materials and Solar Cells | 2011 | 6 Pages |
Despite the high solar cell efficiencies achieved with Cu(In,Ga)Se2 (CIGS) absorbers, key parameters such as the carrier diffusion length and recombination lifetime are still under investigation. Here, we extract lifetime and diffusion length from temperature-dependent internal quantum efficiency (IQET) spectra of state of the art high efficiency CIGS solar cells. Two-parameter fits to the measured IQE curves using a model for double-graded gap solar cells show very good agreement in the studied temperature range T=146–293 K, allowing the extraction of the electron recombination lifetime in the absorber and the collection probability in the front region of the cell. The obtained results agree with current literature values obtained by other characterization techniques. Furthermore, the temperature dependence of the recombination lifetime is explained by Shockley–Read–Hall recombination through a single bulk defect level with an activation energy of 200 meV.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We present a temperature-dependent internal quantum efficiency model (IQET) for CIGS solar cells. ► The model suits double-graded bandgap cells, enabling the extraction of fundamental parameters. ► Fits to IQET data yield T-dependent diffusion length, Urbach energy, and carrier lifetime data. ► The lifetime data extracted from IQET provide activation energies of bulk recombination centers.
