Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7938274 | Solar Energy | 2014 | 7 Pages |
Abstract
In order to characterize the surface of nanocrystalline hydrogenated silicon (nc-Si:H) and to get more insight into the film's growth deposited by plasma enhanced chemical vapor deposition (PECVD), spectroscopic ellipsometry measurements have been performed after deposition of profiled layers at different hydrogen flow rate (FH2). This study showed that by increasing the FH2, the layer's thickness decrease and at the same time the Tauc's optical band gap remains as high as 1.45Â eV or much higher. This can be attributed to either the presence of microvoids in the films or an increase in the bonded hydrogen content.
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Authors
Sana Ben Amor, Rabaa Bousbih, Rachid Ouertani, Wissem Dimassi, Hatem Ezzaouia,