| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7938605 | Superlattices and Microstructures | 2018 | 16 Pages |
Abstract
Au/Ni/β-Ga2O3 Schottky barrier diodes were fabricated on a 15â¯Î¼m drift layer mechanically exfoliated from (100)-oriented β-Ga2O3 bulk. The temperature dependent current density-voltage (J-V) characteristics from 300â¯K to 550â¯K were investigated and the barrier height and ideality factor were determined. Compared with the thermionic emission (TE) model, the forward J-V behavior follows thermionic field emission (TFE) model and the reverse J-V characteristics can be explained by Poole-Frenkel model.
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Authors
Ang Li, Qian Feng, Jincheng Zhang, Zhuangzhuang Hu, Zhaoqing Feng, Ke Zhang, Chunfu Zhang, Hong Zhou, Yue hao,