Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7938663 | Superlattices and Microstructures | 2018 | 14 Pages |
Abstract
We investigated the morphological, structural, optical, electrical and carrier relaxation dynamic changes on the self-assembled grown InGaN nanocolumns (NCs) directly on p-Si(111) substrate at two different substrate temperature, namely 580â¯Â°C (A) and 500â¯Â°C (B). The emission wavelength of comparably low temperature (LT) grown NCs was red-shifted from 3.2eV to 2.4eV. First observations on the charge carrier dynamics of these directly grown NCs show comparable broad excited state absorption (ESA) for LT gown NCs, which manifest bi-exponential decay due to the radiative defects generated during the coalescence of these NCs.
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Authors
Praveen Kumar, Pooja Devi, P.E.D. Soto Rodriguez, Rishabh Jain, Neena Jaggi, R.K. Sinha, Mahesh Kumar,