Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices

The practically exploitable interband and intraband emission wavelength from direct bandgap strained GeSn/Ge quantum dots are numerically tuned ensuring the fulfillment of specific criteria imposing the electrons confined states in Г-valley to be sufficiently below those in L-valley. This study suggests promising opportunity towards high efficient group IV QD based infrared optical devices operating in the mid-IR (2.2-4.3 μm) and far-IR (11.8-43 μm) wavelength regions.47