Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7938689 | Superlattices and Microstructures | 2018 | 19 Pages |
Abstract
GaN epitaxial films with SiNx interlayers were prepared by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. The influences of deposition times and locations of SiNx interlayers on crystal quality of GaN epitaxial films were studied. Under the optimal growth time of 120â¯s for the SiNx interlayer, the dislocation density of GaN film is reduced to 4.05â¯Ãâ¯108â¯cmâ2 proved by high resolution X-ray diffraction results. It is found that when the SiNx interlayer deposits on the GaN nucleation islands, the subsequent GaN film has the lowest dislocation density of only 2.89â¯Ãâ¯108â¯cmâ2. Moreover, a model is proposed to illustrate the morphological evolution and associated propagation processes of TDs in GaN epi-layers with SiNx interlayers for different deposition times and locations.
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Authors
Teng Fan, Wei Jia, Guangyun Tong, Guangmei Zhai, Tianbao Li, Hailiang Dong, Bingshe Xu,