Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7938692 | Superlattices and Microstructures | 2018 | 7 Pages |
Abstract
We report solution-processed high-mobility ZnO thin film transistors (TFTs) obtained by inserting multiple-stacked channel layers comprising two layers of ZnO/Hf-doped ZnO and three layers of ZnO/Mg-doped ZnO/Hf-doped ZnO. The mobility of the thus-prepared TFTs was enhanced compared to a single layer of undoped ZnO and Mg-/Hf-doped ZnO. The TFTs prepared by double- and triple-stacked channels exhibited excellent electrical performances with high field-effect mobilities of 36.0 and 71.9â¯cm2â¯Vâ1sâ1, respectively, and high on/off current ratios of the order of 107. X-ray photoelectron spectroscopy and transmittance measurements suggest that the double- and triple-stacked channel layers composed of undoped ZnO and ZnO matrix doped with Hf and Mg could provide suitable charge carriers and reduce the trap state at the interfaces.
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Materials Science
Electronic, Optical and Magnetic Materials
Authors
Manoj Kumar, Hakyung Jeong, Dongjin Lee,