Article ID Journal Published Year Pages File Type
7938746 Superlattices and Microstructures 2018 6 Pages PDF
Abstract
AlGaN/GaN-based HEMT with ohmic contacts made of Al/Ti/Au metals is one reason for crack. Fracture effect is caused during the manufacturing process. The stress-energy acts during annealing causes crack in the layer of the HEMT device. The strain energy makes the increase in the length of the crack. In this paper, plane stress and strain is been broadly analyzed and studied with the crack. The rate of change of energy released per unit crack is also studied and is seen changing linearly.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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