Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7938759 | Superlattices and Microstructures | 2018 | 18 Pages |
Abstract
In the present work, using density functional theory (DFT), we investigate the influence of biaxial strain εb on electronic and optical properties of single-layer GeS. Our DFT calculations show that single-layer GeS is a semiconducting material at equilibrium and semiconductor-metal phase transition may occur at large compression biaxial strain. The optical absorption of single-layer GeS is high in the range of the middle ultraviolet lights. Besides, the biaxial has a great impact on the optical spectra of single-layer GeS in the high energy domains. The semiconductor-metal phase transition and the computational results of the absorption of GeS can provide more useful information for applications in nanoelectromechanical and optoelectronic devices.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Khang D. Pham, Chuong V. Nguyen, Huynh V. Phuc, Tuan V. Vu, Nguyen V. Hieu, Bui D. Hoi, Le C. Nhan, Vo Q. Nha, Nguyen N. Hieu,