Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7938781 | Superlattices and Microstructures | 2018 | 13 Pages |
Abstract
A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density â¼2.4â¯Ãâ¯107â¯cmâ2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Tiantian Wei, Hua Zong, Shengxiang Jiang, Yue Yang, Hui Liao, Yahong Xie, Wenjie Wang, Junze Li, Jun Tang, Xiaodong Hu,