Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7938813 | Superlattices and Microstructures | 2018 | 13 Pages |
Abstract
The effect of ammonia flux towards the quality of the semi-polar (11-22) gallium nitride thin film on m-plane (10-10) sapphire is presented. Semi-polar (11-22) gallium nitride epi-layers were obtained using a two-step growth method, consisting of high temperature aluminum nitride followed by gallium nitride via metal organic chemical vapor deposition. The surface morphology analysis via field emission scanning electron microscopy and atomic force microscopy of the semi-polar (11-22) gallium nitride has shown that low ammonia flux promotes two-dimensional growth with low surface roughness of 4.08â¯nm. A dominant diffraction peak of (11-22) gallium nitride was also observed via X-ray diffraction upon utilizing low ammonia flux. The on- and off-axis X-ray rocking curve measurements illustrate the enhancement of the crystal quality, which might result from the reduction of the basal stacking faults and perfect dislocation. The full width half maximum values were reduced by at least 15% for both on- and off-axis measurements.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Al-Zuhairi Omar, Ahmad Shuhaimi Bin Abu Bakar, Abdullah Haaziq Ahmad Makinudin, Muhammad Imran Mustafa Abdul Khudus, Adreen Azman, Anas Kamarundzaman, Azzuliani Supangat,