Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7938820 | Superlattices and Microstructures | 2018 | 5 Pages |
Abstract
Strain and built-in fields in wurtzite (WZ) GaN/AlxIn1âxN quantum wells (QWs) and quantum dots (QDs) with piezoelectric (PZ) and spontaneous (SP) polarizations were investigated by using a multi-band effective mass theory. In the case of GaN/AlInN QW structures, the built-in field in the well nearly becomes zero for the QW structure with xâ¯=â¯0.7 while the potential well depth in the conduction band is very small. However, the GaN/AlInN QD structures show that the built-in field in the GaN dot does not become zero in a range of an investigated Al content and the carrier confinement is possible even for the QD structure with xâ¯=â¯0.7. The potential profiles of both QW and QD structures change from type-I to type-II at the Al content of xâ¯=â¯0.7. These results can be used as a design guide for fabrications of QD-based optoelectronic devices with a high emission intensity.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Seoung-Hwan Park,