| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7938899 | Superlattices and Microstructures | 2018 | 8 Pages |
Abstract
An ultra-low turn-on voltage (VT) Î-shaped anode AlGaN/GaN Schottky barrier diode (GA-SBD) is proposed via modeling and simulation for the first time, in which a Î-shaped anode consists of a metal-2DEG junction together with a metal-AlGaN junction beside a shallowly recessed MIS field plate (MFP). An analytic forward current-voltage model matching the simulation results well is presented where an ultra-low VT of 0.08â¯V is obtained. The turn-on and blocking mechanisms are investigated to reveal the GA-SBD's great potential for applications of highly efficient power ICs.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Zeheng Wang, Wanjun Chen, Fangzhou Wang, Jun Cao, Ruize Sun, Kailin Ren, Yi Luo, Songnan Guo, Zirui Wang, Xiaosheng Jin, Lei Yang, Bo Zhang,