Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7938931 | Superlattices and Microstructures | 2018 | 8 Pages |
Abstract
In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL aluminum composition (3% and 12%) and design (graded and superlattice). The results of electro-optical characterization of these laser diodes reveal surprisingly modest role of electron blocking layer composition in determination of the threshold current and the differential efficiency values. However, EBL structure influences the operating voltage, which is decreased for devices with lower EBL and superlattice EBL. We observe also the differences in the thermal stability of devices - characteristic temperature is lower for lasers with 3% Al in EBL.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Agata Bojarska, Jakub Goss, Szymon Stanczyk, Irina Makarowa, Dario Schiavon, Robert Czernecki, Tadeusz Suski, Piotr Perlin,