| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7938962 | Superlattices and Microstructures | 2018 | 5 Pages |
Abstract
Ultraviolet light emission characteristics of lattice-matched BxAlyGa1âxây N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Seoung-Hwan Park, Doyeol Ahn,