Assessment of read and write stability for 6T SRAM cell based on charge plasma DLTFET

To overcome the process variations due to random dopant fluctuations (RDFs) and complex annealing techniques a charge plasma based doping less TFET (CP-DLTFET) device has been proposed for designing of 6T SRAM cell. The proposed device also benefited by subthreshold slope, low leakage current, and low power supply. In this paper, to avoid the dependency of stability parameters of SRAM cell to supply voltage (Vdd), here N-curve metrics has been analyzed to determine read and write stability. Because N-curve provides stability analysis in terms of voltage and current as well as it gives combine stability analysis with the facility of an inline tester. Further, analyzing the N-curve metrics for different Vdd, cell ratio, and pull-up ratio assist in designing the configuration of transistors for the better read and write stability. Power metrics of N-curve gives the knowledge about read and write stability instead of using four metrics (SINM, SVNM, WTV, and WTI) of N-curve. Finally, in the 6T CP-DLTFET SRAM cell, read and write stability is tested by the interface trap charges (ITCs). The performance parameter of the 6T CP-DLTFET SRAM cell provides considerable read and write stability with less fabrication complexity.