Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7938981 | Superlattices and Microstructures | 2018 | 36 Pages |
Abstract
Six possible multiple stacks of Cu-ZnSe-Ge with selenium incorporation at a precursor stage were prepared using electron beam evaporation followed by vacuum selenization at 475â¯Â°C for 30â¯min to investigate the role of stacking order on the growth and properties of Cu2ZnGeSe4 films. The X-ray diffraction measurements affirm the existence of various binary and ternary phases (ZnSe, Cu2Se, GeSe2 and Cu2GeSe3) for all the precursor stacks. These phases are completely diminished after selenization at 475â¯Â°C except a minor co-existence of ZnSe (111) phase along with dominant Cu2ZnGeSe4 (112) phase for stack A: (Cu/Se/ZnSe/Se/Ge/Se)â¯Ãâ¯4. The Raman measurements for selenized multiple stack A, revealed two major A3, A1 modes at 206â¯cmâ1 and 176â¯cmâ1 and one minor E5 mode at 270â¯cmâ1 corresponding to CZGSe phase. The surface morphology and the elemental distribution across the thickness found to vary significantly with the change of stacking order. The selenized multiple stacks A films shows densely packed flake and capsule shaped grains. The selenized stack A found to have a direct energy band gap of 1.60â¯eV, showing p-type conductivity with a Hall mobility of 22â¯cm2 (Vs)â1.
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Authors
G. Swapna Mary, G. Hema Chandra, M. Anantha Sunil, Y.P. Venkata Subbaiah, Mukul Gupta, R. Prasada Rao,