| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7939030 | Superlattices and Microstructures | 2018 | 11 Pages |
Abstract
The current research highlights the subthreshold short channel characteristics of a novel structure namely Dual-material gate strained Trapezoidal strained FinFET. Based on the effective channel width and equivalent number of gates (ENG), we have developed a quasi-3-D scaling length model and examined device characteristics like potential and electric field. The response of the device towards the various short channel effects has also been studied in depth. The analytical results obtained have been verified using 3-D numerical device simulation results.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Pritha Banerjee, Subir Kumar Sarkar,