| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7939195 | Superlattices and Microstructures | 2018 | 20 Pages |
Abstract
InGaN samples are grown using metalorganic chemical vapor deposition (MOCVD) and the dependences of structural and luminescence properties of InGaN layers on growth temperature are studied. It is found that the luminescence properties of InGaN layer are improved by increasing growth temperature properly. However, when the growth temperature of InGaN layer is too higher (740 °C in our work), a large amount of unintentionally incorporated gallium atoms enter into InGaN, and a spiral growth mode dominates in this case. It results in an inferior crystalline and interface quality, and ultimately degrades the luminescence of InGaN.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
J. Yang, S.T. Liu, X.W. Wang, D.G. Zhao, D.S. Jiang, P. Chen, J.J. Zhu, Z.S. Liu, F. Liang, W. Liu, L.Q. Zhang, H. Yang, W.J. Wang, M. Li,