Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7939237 | Superlattices and Microstructures | 2018 | 28 Pages |
Abstract
A new method to determine the two-dimensional electron gas (2DEG) density distribution of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) after the Si3N4 passivation process has been presented. Detailed device characteristics were investigated and better transport properties have been observed for the passivated devices. The strain variation and the influence of the surface trapping states were analyzed. By using the polarization Coulomb field (PCF) scattering theory, the 2DEG density after passivation was both quantitively and qualitatively determined, which has been increased by 45% under the access regions and decreased by 2% under the gate region.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Chen Fu, Zhaojun Lin, Peng Cui, Yuanjie Lv, Yang Zhou, Gang Dai, Chongbiao Luan, Huan Liu, Aijie Cheng,