| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7939421 | Superlattices and Microstructures | 2018 | 7 Pages |
Abstract
High efficiency of green GaAlInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of â¼510Â nm. By introducing quaternary quantum well (QW) along with the quaternary barrier (QB) and quaternary electron blocking layer (EBL) in a single structure, an efficiency droop reduction of up to 29% has been achieved in comparison to the conventional GaN-based LED. The proposed structure has significantly reduced electrostatic field in the active region. As a result, carrier leakage has been minimized and spontaneous emission rate has been doubled.
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Authors
Muhammad Usman, Kiran Saba, Dong-Pyo Han, Nazeer Muhammad,